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Saturday, February 27, 2010

IM Flash Technologies disclose 25nm NAND Flash

IMFT Technologies

Intel and Micron has come along to entertain the whole digital world. IM Flash Technologies a name that representing the joint venture of both companies. The main aim of newly developed venture is only to bring out NAND flash memory. A sharp and intense research and development program conducted by IMFT has multiplied twice of NAND density in around every 18 months. IMFT has begun producing the 50nm in 2006 after that they moved to 40nm process in 2008 year. This venture defiantly brings pocket-size, inexpensive along higher memory capacity of flash-based NAND product.


IMFT Technologies
The IMFT has been made a public announcement on 1-February-2010 for their 25 nanometer NAND product. This step will surely lead a crucial advancement for the company. Presently, IMFT claims to the world’s smallest semiconductor processed memory flash drive in electronic market. The companies expressed the achievement such as:
“To lead the entire semiconductor industry with the most advanced process technology is a phenomenal feat for Intel and Micron, and we look forward to further pushing the scaling limits,” said Brian Shirley, vice president of Micron’s memory group. “This production technology will enable significant benefits to our customers through higher density media solutions.”

“Through our continued investment in IMFT, we’re delivering leadership technology and manufacturing that enable the most cost-effective and reliable NAND memory,” said Tom Rampone, vice president and general manager, Intel NAND Solutions Group. “This will help speed the adoption of solid-state drive solutions for computing.”


IMFT Technologies

Well, company believing that they will shortly present the number of high tech and economical product in front of the world. The IMFT following the way to introduce its 1st product and 1st monolithic 8GB NAND device, size 167mm2 which is quite enough to fit through the middle hole of compact disc, in end of the 2010 year. This product has containing double storage captaincy of its 34nm semiconductor product.

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